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dc.contributor.authorDuy, To Tuong
dc.date.accessioned2014-12-02T03:40:38Z
dc.date.accessioned2018-05-23T02:19:32Z
dc.date.available2014-12-02T03:40:38Z
dc.date.available2018-05-23T02:19:32Z
dc.date.issued2012
dc.identifier.urihttp://10.8.20.7:8080/xmlui/handle/123456789/1209
dc.description.abstractThis work aims to research and fabricate a Low Noise Amplifier circuit with high gain and low noise working at S-band radar application by using transistor BFU690F. The design simulation process is done using Advance Design System (ADS) which is donated by Agilent Company to IU. In this work, a Low Noise Amplifier designed with the goal specifications as follows: Gain ≥ 8 dB, Noise figure ≤ 3 dB and S11 & S22 ≤ - 12 dB at the center frequency of 3.3 GHz. Also the expectative Low Noise Amplifier works stably in the frequency range of 3.1 GHz to 3.5 GHz.en_US
dc.language.isoen_USen_US
dc.publisherInternational University HCMC, Vietnamen_US
dc.relation.ispartofseries;022001813
dc.subjectS-Brand radar - Applicationen_US
dc.titleResearch and fabricate low noise amplifier working at S-Brand radar application using transistor BFU690Fen_US
dc.typeThesisen_US


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