Research and fabricate low noise amplifier working at S-Brand radar application using transistor BFU690F

Abstract

This work aims to research and fabricate a Low Noise Amplifier circuit with high gain and low noise working at S-band radar application by using transistor BFU690F. The design simulation process is done using Advance Design System (ADS) which is donated by Agilent Company to IU. In this work, a Low Noise Amplifier designed with the goal specifications as follows: Gain ≥ 8 dB, Noise figure ≤ 3 dB and S11 & S22 ≤ - 12 dB at the center frequency of 3.3 GHz. Also the expectative Low Noise Amplifier works stably in the frequency range of 3.1 GHz to 3.5 GHz.