dc.contributor.author | Duy, To Tuong | |
dc.date.accessioned | 2014-12-02T03:40:38Z | |
dc.date.accessioned | 2018-05-23T02:19:32Z | |
dc.date.available | 2014-12-02T03:40:38Z | |
dc.date.available | 2018-05-23T02:19:32Z | |
dc.date.issued | 2012 | |
dc.identifier.uri | http://10.8.20.7:8080/xmlui/handle/123456789/1209 | |
dc.description.abstract | This work aims to research and fabricate a Low Noise Amplifier circuit with high gain and low noise working at S-band radar application by using transistor BFU690F. The design simulation process is done using Advance Design System (ADS) which is donated by Agilent Company to IU.
In this work, a Low Noise Amplifier designed with the goal specifications as follows: Gain ≥ 8 dB, Noise figure ≤ 3 dB and S11 & S22 ≤ - 12 dB at the center frequency of 3.3 GHz. Also the expectative Low Noise Amplifier works stably in the frequency range of 3.1 GHz to 3.5 GHz. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | International University HCMC, Vietnam | en_US |
dc.relation.ispartofseries | ;022001813 | |
dc.subject | S-Brand radar - Application | en_US |
dc.title | Research and fabricate low noise amplifier working at S-Brand radar application using transistor BFU690F | en_US |
dc.type | Thesis | en_US |